Showing posts with label Electronics. Show all posts
Showing posts with label Electronics. Show all posts

Sunday, April 5, 2020

SOC Chips and Memory Design

A System-On-A-Chip, or SOC is understood to mean a chip that includes one or more microprocessors (cores) and any number of associated peripheral chips. The definition is not a hard definition. Often a SOC is categorized as any chip whose function performs that of any electronic system regardless of whether or not it has a microprocessor or not. The origin of SOC terminology dates back to the 1980s when the idea of a PC on a chip was introduced. At that point in time integrated circuit technology had advanced to a point that more than just a microprocessor could be integrated into a single chip.

A typical microprocessor system then basically consisted of a microprocessor, a memory controller and an IO controller. Memory controllers are used to access DRAM, Flash, SRAM and ROM memory banks within the computers memory. IO controllers are used to access serial and parallel peripheral devices such as disk drives, USB ports, the keyboard, the mouse, and the screen. Another chip that can be found in the classic PC is a DMA controller. A DMA controller, which can be also classified as an IO controller, is used to access main memory without the need for microprocessor intervention.  This lowers  memory access time and lowers overall power consumption. At the same time it frees the microprocessor to perform other processing tasks.

Today a SOC includes much more than a microprocessor and a few peripheral control chips. For example, the SnapDragon line of mobile phone processing chips include up to eight microprocessor cores, a graphic processing unit. a DSP processor, a security processor, cache tag and data SRAM memory as well as a DDR SDRAM and cache memory controller.

The block diagram below shows a SOC chip that includes two microprocessor cores, data cache SRAM, a SDRAM DDR controller and a cache controller with a content addressable memory (CAM). Having the data cache SRAM on chip speeds memory accesses and lowers power consumption.  Sending data off chip always increases delay time and raises power consumption This is because the internal chip does not have the high capacitance associated with PC traces and the input and outputs of a chip's pins.

The integrate cache controller, CAM and data cache are critical to improving memory access time

The CAM also speeds memory access time. The CAM is a special type of memory that uses a digital comparator to locate data at an address in a high speed data cache SRAM. The cache tag SRAM, or CAM, contains the addressees of the data that the microprocessor uses most often. When the microprocessor sends out an address to the cache tag a bank of comparators within the cache tag compares the microprocessor address in each CAM location simultaneously to see if that address is in the CAM. If there is an address match, the data location that matches that address signals a "hit." The cache tag controller then accesses the data cache SRAM address so the microprocessor can read the data.

One of the reasons why CAMs are so much faster than SRAMs or DRAMs is that a comparator instead of a decoder is used to locate an address location. A decoder has several layers of logic that introduce delays in accessing a memory's data. DRAMs because of their much more complex decoding scheme are slower than SRAMs. The key point to remember about cache memory architecture is that it allows data that is used most often to stay in localized high speed SRAM memory. This means accesses to slower DRAMs, FLASH and disk drives are minimized. In fact, accesses to slower memory devices can be reduced by as much as 98 percent.



Tuesday, October 31, 2017

Inductive Reactance Calculator and Tutorial

Inductive reactance is the inductor equivalent to the resistance of a resistor. Unlike a resistor, a inductor's reactance is directly proportional to frequency. An inductor exhibits zero reactance to a DC (0 Hertz) signal. As frequency goes up, the inductive reactance will goes up. At very high frequencies the capacitive reactance of circuit approaches infinity. For this reason, inductors are shorts to DC signals and open circuits to high frequencies. .

The formula for calculating capacitive reactance is:

Equation 1: Xl = 2*PI*F*L

where

Xl is the inductove reactance in Ohms
PI is the constant 3.14
F is the frequency in Hertz
L is the value of the inductance in Henries

Inductance Reactance Calculator

You can see how the inductive eactance changes with frequency and capacitance using the inductance reactance calculator below. Enter in the inductance in uH (microHenires) and the frequency in Hertz. If you enter in 0 for the frequency the calculator calculates an answer of 0. If you want to change the frequency easily, after you enter a number in the frequency box, simply hold down the up or down arrow keys on your keyboard.

What you will notice with this calculator, is that the inductive reactance is relatively low for low frequencies and low values of inductances. In order to increase the inductive reactance substancially, you will need a frequency in the megahertz region or an inductor that is in the range of of millihenries.
Inductance Reactance Calculator

Inductive Reactance Ohms :

Wednesday, August 30, 2017

Resistors in Parallel: Electronics Tutorial #10, BookMarkTutoring.com

Placing resistors in parallel reduces the overall resistance of a circuit. The equation for calculating the equivalent resistance of two or more resistors in parallel is


Equation 1: Req = 1/(1/R1 + 1/R2 + 1/R3 + ..... + 1/Rn) 

For the circuit shown below, where R1 = 2 Ohms, R2 = 4  Ohms and R3 = 4 Ohms, the equivalent resistance calculated with equation 1 is 

Req = 1/(1/R1 + 1/R2 + 1/R3)

Req = 1/(1/2 + 1/4 + 1/4) = 1/(6/12 + 3/12 + 3/12) = 1/(12/12) = 1 Ohm 


The equivalent resistance of resistors in parallel is always lower than the lowest value resistor
Circuit Applications

Resistors are often placed in parallel to construct a resistor that doesn't come in a standard value or, in many cases, to allow the use of resistors with lower power ratings. When resistors are placed in parallel the current splits between the different branches in the parallel circuit. The amount of current in each branch is proportional to the resistance in each branch. Branches with lower resistance will conduct more current. 

Another reason to place resistors in parallel is  even heat distribution. Current flow results in energy dissipation which in turn results in heat. If one resistor is used instead of several resistors in parallel the heat will be more concentrated on the circuit board. As well, the large resistor will need a higher power rating. The higher levels of concentrated heat may result in a design that has a lower mean time between failure. This can be especially true in designs that must carry a significant amount of current. 

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Voltage Dividers: Electronics Tutorials #9

A voltage divider is most often used to provide a voltage that is a fraction of a battery voltage. It most often consists of two resistors that are connected in series with a battery.  The ratio of the resistors determines the output voltage from the voltage divider.

The formula for calculating the output voltage of a voltage divider with two resistors connected to a battery is

Equation 1:  Vout= Vbattery*R2/(R1 + R2) 

The circuit diagram below shows a voltage divider connected to a 10 V battery.  With the 2000 and 3000 ohm resistors, the output voltage is calculated  from equation 1 as

Vout = 10*3000/(2000 + 3000) = 6 Volts




The idea can be extended to any number of resistors to obtain any fractional output voltage desired.  The formula comes about by dividing the applied voltage across the total series resistance to obtain the current. In the example above the current is 2 mA (10V/5000 Ohms). The current multiplied by the resistor will give the voltage drop across the resistor.

Voltage Buffers

Often when a voltage divider is used to supply a different voltage than a battery voltage, a voltage buffer is placed at the output voltage node of the voltage divider.   A voltage buffer, because it does not draw any current (or very little), will not change the output voltage of the voltage divider. Voltage buffers are often made from transistor devices such as JFETs and MOSFETs.

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Sunday, August 27, 2017

Electronics Tutorial: JFET Current Voltage Characteristics: IV Curves with LTSpice


LTSpice offers one way to generate IV curves without an expensive curve tracer. However, how well LTSpice IV curves match the actual device’s IV curves depends on how accurately the JFET model matches the actual device. Not all LTSpice models are created equal. Some models are bare bones and will only give you a a rough estimate of the actual IV curves.  Most models include the pinchoff voltage and beta parameter, which take into account the drain to source saturation current. Additionally, most models are only specified for a given set of process conditions. This process condition most often corresponds to the minimum data specifications on the data sheet.

JFET  IV Characteristics (Curve Tracing)

The basic circuit for generating IV curves for a N channel is shown below. It utilizes two supplies,  one for generating the gate to source voltage (VGS) and one for generating the drain to source voltage (VDS). During the simulation, the gate to source voltage is kept constant and the drain to source voltage is stepped from 0 Volts to a maximum drain to source voltage. 

However, a complete set of IV curves requires that the drain-to-source current be measured at different VGS voltages.  The typical LTSpice simulation command for generating  a set of  JFET IV  curves is

.DC VDS 0  15 0.01 VGS -1.5 0 -0.3




LTSPICE Circuit Schematic for Generating IV Curves for a JFET


Th e DC sweep command instructs the simulator to first set the gate voltage to -1.5 volts and then sweep the VDS power supply from 0 to 15 volts in 0.01 volt steps. Once that sweep is complete, the VGS supply is incremented by -0.5 Volts to  -1.5 Volts and VDS is swept again from 0 to 15 volts  This process continues until VGS reaches 0 V. A N-Channel JFET is fully on when the gate-to-source voltage is 0 V. When VGS is at the pinchoff voltage the drain to source current is zero. For the default JFET LTSPICE model used in this example, the pinchoff parameter is at its default value of - 2 Volts.



IV Characteristics of Default N-Channel JFET LTSPICE Model


The default N-Channel default model also uses LAMBA = 0.  Because LAMBDA is zero, the slope of the IV curves in the saturation region is zero also.  For the most part, this is not the way a real JFET operates. The IV curves in the saturation region have a small slope, which is set with the value of LAMBDA. 

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Tuesday, July 21, 2015

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